? 2000 ixys all rights reserved 1 - 2 power schottky rectifier features ? international standard package very low v f extremely low switching losses low i rm -values epoxy meets ul 94v-0 applications rectifiers in switch mode power supplies (smps) free wheeling diode in low voltage converters advantages high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching low losses dimensions see outlines.pdf pulse test: pulse width = 5 ms, duty cycle < 2.0 % data according to iec 60747 and per diode unless otherwise specified ixys reserves the right to change limits, conditions and dimensions. a c c a to-220 ac c (tab) a = anode, c = cathode , tab = cathode symbol conditions maximum ratings i frms 35 a i fav t c = 160 c; rectangular, d = 0.5 10 a i fsm t vj = 45c; t p = 10 ms (50 hz), sine 140 a e as i as = 13 a; l = 180 h; t vj = 25c; non repetitive 24 mj i ar v a =1.5 v rrm typ.; f=10 khz; repetitive 1.3 a (dv/dt) cr 1000 v/ s t vj -55...+175 c t vjm 175 c t stg -55...+150 c p tot t c = 25 c90w m d mounting torque 0.4...0.6 nm weight typical 2 g 007 dss 10-0045a v rsm v rrm type v v 45 45 dss 10-0045a symbol conditions characteristic values typ. max. i r t vj = 25c v r = v rrm 0.3 ma t vj = 125c v r = v rrm 2.5 ma v f i f = 10 a; t vj = 125c 0.58 v i f = 10 a; t vj = 25c 0.68 v i f = 20 a; t vj = 125 c 0.70 v r thjc 1.7 k/w r thch 0.5 k/w i fav = 10 a v rrm = 45 v v f = 0.58 v
? 2000 ixys all rights reserved 2 - 2 0.0 0.2 0.4 0.6 0.8 1.0 1 10 100 0 1020304050 0.0001 0.001 0.01 0.1 1 10 51525 0102030 0 5 10 15 20 25 30 0.0001 0.001 0.01 0.1 1 10 0.01 0.1 1 04080120160 0 5 10 15 20 25 30 35 40 i f(av) t c c i f(av) t s k/w 10 100 1000 10000 100 1000 10000 i fsm t p a 0 1020304050 100 1000 c t i r i f a v f v r v r v pf v ma a p (av) w z thjc v single pulse (thermal resistance) dss 10-0045a a s t vj =175 c 150 c 125 c 100 c 50 c 25 c t vj = 175 c 150 c 125 c 25 c t vj = 25 c d=0.5 d = dc 0.5 0.33 0.25 0.17 0.08 75 c dc 0.08 d=0.5 0.33 0.25 0.17 dss 10-0045a 007 fig. 3 typ. junction capacitance c t versus reverse voltage v r fig. 2 typ. value of reverse current i r versus reverse voltage v r fig. 1 maximum forward voltage drop characteristics fig. 4 average forward current i f(av) versus case temperature t c fig. 5 forward power loss characteristics fig. 6 transient thermal impedance junction to case at various duty cycles note: all curves are per diode
|